ESPCI web site
Thursday June 23 at 2:00 pm (Paris time)
Room Boreau, building C, 2nd floor
Tailor-Made Self-Assembled Monolayers Grafted on Metallic Oxide Layers (MOx) : Organic/hybrid Electronic Devices Performance and Modified Interface Relationship
The control of MOx-semiconductor film interfaces is crucial in organic or hybrid electronic devices such as field-effect transistors or hybrid photovoltaic (PV) cells ; The MOx layer is either the oxidized metallic electrode the transparent electrode or an intermediate electron or holes transport layer (ETL , HTL) . A self-assembled monolayer of X-R-Y molecules grafted via the X anchoring pole ( X=-SH, -COOH, -H2PO3, silane ; R = spacer ; Y = relevant function) on MOx allows either to align the electronic levels to facilitate the injection of the carriers, to limit the energy losses or to induce a specific growth of a more stable semiconductor film. The latter is here of organic type or hybrid perovskite type (PH) of general structure ABX3 like CH3NH3-PbI3 (MAPI) giving a power conversion efficiency (PCE) up to 24%.
We will address the effect of X-R-Pn-R-Y SAMs (P=phenyl ; R = H, CH2) by showing how the choice of Y associated with molecular engineering will lead to optimal MOx work function and semiconductor film structure towards performances of electronic devices.
